NASA NTRS · 20190000797
Simultaneous Ohmic Contact to Silicon Carbide
Abstract
A simultaneous ohmic contact to silicon carbide includes a mixture of platinum, titanium, and silicon compounds deposited on a silicon carbide substrate. The silicon carbide substrate includes an n-type surface and a p-type surface.
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Okojie, Robert S.. 2019-01-29. Simultaneous Ohmic Contact to Silicon Carbide. https://ntrs.nasa.gov/citations/20190000797
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