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NASA NTRS · 20205006472

MT29F512G08AUCBBH8-6IT:B NAND Flash Memory Total Ionizing Dose Test Report

Alyson Dyan Topper·Edward Wilcox·Michael Campola
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Abstract

The purpose of this test was to characterize the Micron 512 GB NAND (MT29F512G08AUCBBH8-6IT:B) flash memory parameter degradation for total dose response. In the test, the device was exposed to high dose rate (HDR) irradiations using gamma radiation. Device parameters such as leakage currents, quantity of upset bits and overall chip and die health were investigated.

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Alyson Dyan Topper, Edward Wilcox, Michael Campola. 2018-05-25. MT29F512G08AUCBBH8-6IT:B NAND Flash Memory Total Ionizing Dose Test Report. https://ntrs.nasa.gov/citations/20205006472

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