Search NASA⌕ Search

NASA NTRS · 20210002951

Displacement Damage in Bipolar Linear Integrated Circuits

Abstract

Although many different processes can be used to manufacture linear integrated circuits, the process that is used for most circuits is optimized for high voltage -- a total power supply voltage of about 40 V -- and low cost.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Miyahira, T., Johnston, A., Rax, B.. 1999-07-12. Displacement Damage in Bipolar Linear Integrated Circuits. https://ntrs.nasa.gov/citations/20210002951

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related reports

AD620SQ/883B Total Ionizing Dose Radiation Lot Acceptance Report for RESTORE-LEO

A Radiation Lot Acceptance Test was performed on the AD620SQ/883B, Lot 1708D, in accordance with MIL-STD-883, Method 1019, Condition D. Using a Co-60 source 4 biased parts and 4 unbiased parts were irradiated at 10 mrad/s (0.036 krad/hr) in intervals of approximately 1 krad from 3-10 krads, and ones of 5 krads from 10-25 krads, where it was annealed while unbiased at 25 degrees Celsius, for 2 days, and then, subsequently, annealed while biased at 25 degrees celsius, for another 7 days.

Bipolar↗