Wide Bandgap Semiconductor Devices & Systems for Communications in Extreme Environment

Rainee N. Simons

NASA NTRS · 20220010099

Wide Bandgap Semiconductor Devices & Systems for Communications in Extreme Environment

Abstract

The feasibility of Ka-band gallium nitride (GaN) based high power amplifier (HPA) for signal amplification in extreme planetary environment is investigated and its measured performance is presented. The data includes Pout, PAE, EVM for several waveforms and data rates, output spectrum, IMD, Noise Figure, and Gain. The data indicates excellent overall performance. Potential application of this HPA includes communication systems required to operate in the extreme hot environment of Mercury and Venus, extreme cold and high radiation environment of Jupiter’s icy moons, and Artemis missions that involve human/robotic exploration and long-term presence on the Moon.

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Gallium Nitride Wide Bandgap Semiconductors High Power Microwave Amplifier Artemis missions Planetary Missions Error Vector Magnitude Noise Figure Balanced Amplifier GaN HEMT GaN MMIC

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Rainee N. Simons. Wide Bandgap Semiconductor Devices & Systems for Communications in Extreme Environment. https://ntrs.nasa.gov/citations/20220010099

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