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DOE OSTI · 1055455

Stacked switchable element and diode combination with a low breakdown switchable element

Wang, Qi·Ward, James Scott·Hu, Jian·Branz, Howard M
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Abstract

A device (10) comprises a semiconductor diode (12) and a switchable element (14) positioned in stacked adjacent relationship. The semiconductor diode (12) and the switchable element (14) are electrically connected in series with one another. The switchable element (14) is switchable from a low-conductance state to a high-conductance state in response to the application of a low-density forming current and/or a low voltage.

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BibTeXRIS

Wang, Qi, Ward, James Scott, Hu, Jian, Branz, Howard M. 2012-06-19. Stacked switchable element and diode combination with a low breakdown switchable element. https://www.osti.gov/biblio/1055455

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