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DOE OSTI · 1266737

Materials Data on GaTe by Materials Project

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Abstract

GaTe is Hittorf-derived structured and crystallizes in the monoclinic C2/m space group. The structure is one-dimensional and consists of two GaTe ribbons oriented in the (0, 1, 0) direction. there are three inequivalent Ga2+ sites. In the first Ga2+ site, Ga2+ is bonded in a trigonal non-coplanar geometry to three Te2- atoms. There are one shorter (2.69 Å) and two longer (2.71 Å) Ga–Te bond lengths. In the second Ga2+ site, Ga2+ is bonded in a trigonal non-coplanar geometry to three Te2- atoms. There are one shorter (2.70 Å) and two longer (2.71 Å) Ga–Te bond lengths. In the third Ga2+ site, Ga2+ is bonded in a trigonal non-coplanar geometry to three Te2- atoms. There are two shorter (2.72 Å) and one longer (2.73 Å) Ga–Te bond lengths. There are three inequivalent Te2- sites. In the first Te2- site, Te2- is bonded in a 3-coordinate geometry to three Ga2+ atoms. In the second Te2- site, Te2- is bonded in a 3-coordinate geometry to three Ga2+ atoms. In the third Te2- site, Te2- is bonded in a 3-coordinate geometry to three Ga2+ atoms.

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36 MATERIALS SCIENCEcrystal structureGa-TeGaTe

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2020-07-15. Materials Data on GaTe by Materials Project. https://doi.org/10.17188/1266737

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