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DOE OSTI · 1277409

Materials Data on GaSi4H30C10Cl by Materials Project

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Abstract

Si(Si(CH3)3)3GaCH3Cl crystallizes in the monoclinic P2_1/c space group. The structure is zero-dimensional and consists of four silicon molecules, twelve trimethylsilyl radical molecules, and two GaCH3Cl clusters. In each GaCH3Cl cluster, Ga3+ is bonded in a distorted trigonal non-coplanar geometry to one C4- and two equivalent Cl1- atoms. The Ga–C bond length is 1.98 Å. There are one shorter (2.45 Å) and one longer (2.47 Å) Ga–Cl bond lengths. C4- is bonded in a tetrahedral geometry to one Ga3+ and three H1+ atoms. All C–H bond lengths are 1.10 Å. There are three inequivalent H1+ sites. In the first H1+ site, H1+ is bonded in a single-bond geometry to one C4- atom. In the second H1+ site, H1+ is bonded in a single-bond geometry to one C4- atom. In the third H1+ site, H1+ is bonded in a single-bond geometry to one C4- atom. Cl1- is bonded in an L-shaped geometry to two equivalent Ga3+ atoms.

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36 MATERIALS SCIENCEC-Cl-Ga-H-Sicrystal structureGaSi4H30C10Cl

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2019-10-22. Materials Data on GaSi4H30C10Cl by Materials Project. https://doi.org/10.17188/1277409

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