Search NASA⌕ Search

DOE OSTI · 1281445

Materials Data on Mn(GaS2)2 by Materials Project

Abstract

MnGa2S4 crystallizes in the triclinic P1 space group. The structure is three-dimensional. there are six inequivalent Mn2+ sites. In the first Mn2+ site, Mn2+ is bonded to six S2- atoms to form MnS6 octahedra that share corners with ten GaS4 tetrahedra and edges with three MnS6 octahedra. There are a spread of Mn–S bond distances ranging from 2.55–2.66 Å. In the second Mn2+ site, Mn2+ is bonded to six S2- atoms to form MnS6 octahedra that share corners with eight GaS4 tetrahedra and edges with five MnS6 octahedra. There are a spread of Mn–S bond distances ranging from 2.54–2.74 Å. In the third Mn2+ site, Mn2+ is bonded to six S2- atoms to form MnS6 octahedra that share corners with ten GaS4 tetrahedra and edges with three MnS6 octahedra. There are a spread of Mn–S bond distances ranging from 2.56–2.67 Å. In the fourth Mn2+ site, Mn2+ is bonded to six S2- atoms to form MnS6 octahedra that share corners with six GaS4 tetrahedra and edges with six MnS6 octahedra. There are a spread of Mn–S bond distances ranging from 2.54–2.61 Å. In the fifth Mn2+ site, Mn2+ is bonded to six S2- atoms to form MnS6 octahedra that share corners with six GaS4 tetrahedra and edges with six MnS6 octahedra. There are a spread of Mn–S bond distances ranging from 2.51–2.62 Å. In the sixth Mn2+ site, Mn2+ is bonded to six S2- atoms to form MnS6 octahedra that share corners with eight GaS4 tetrahedra and edges with five MnS6 octahedra. There are a spread of Mn–S bond distances ranging from 2.54–2.72 Å. There are twelve inequivalent Ga3+ sites. In the first Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with three MnS6 octahedra and corners with six GaS4 tetrahedra. The corner-sharing octahedra tilt angles range from 55–62°. There are a spread of Ga–S bond distances ranging from 2.22–2.36 Å. In the second Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with four MnS6 octahedra and corners with five GaS4 tetrahedra. The corner-sharing octahedra tilt angles range from 51–63°. There are a spread of Ga–S bond distances ranging from 2.26–2.38 Å. In the third Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with four MnS6 octahedra and corners with five GaS4 tetrahedra. The corner-sharing octahedra tilt angles range from 51–63°. There are a spread of Ga–S bond distances ranging from 2.26–2.38 Å. In the fourth Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with three MnS6 octahedra and corners with six GaS4 tetrahedra. The corner-sharing octahedra tilt angles range from 56–63°. There are a spread of Ga–S bond distances ranging from 2.22–2.36 Å. In the fifth Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with five MnS6 octahedra, corners with three GaS4 tetrahedra, and an edgeedge with one GaS4 tetrahedra. The corner-sharing octahedra tilt angles range from 54–61°. There are a spread of Ga–S bond distances ranging from 2.25–2.34 Å. In the sixth Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with three MnS6 octahedra and corners with six GaS4 tetrahedra. The corner-sharing octahedra tilt angles range from 56–63°. There are a spread of Ga–S bond distances ranging from 2.22–2.36 Å. In the seventh Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with five MnS6 octahedra, corners with three GaS4 tetrahedra, and an edgeedge with one GaS4 tetrahedra. The corner-sharing octahedra tilt angles range from 54–61°. There are a spread of Ga–S bond distances ranging from 2.25–2.34 Å. In the eighth Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with five MnS6 octahedra, corners with three GaS4 tetrahedra, and an edgeedge with one GaS4 tetrahedra. The corner-sharing octahedra tilt angles range from 54–61°. There are a spread of Ga–S bond distances ranging from 2.25–2.34 Å. In the ninth Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with five MnS6 octahedra, corners with three GaS4 tetrahedra, and an edgeedge with one GaS4 tetrahedra. The corner-sharing octahedra tilt angles range from 54–61°. There are a spread of Ga–S bond distances ranging from 2.25–2.34 Å. In the tenth Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with four MnS6 octahedra and corners with five GaS4 tetrahedra. The corner-sharing octahedra tilt angles range from 52–63°. There are a spread of Ga–S bond distances ranging from 2.26–2.38 Å. In the eleventh Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with four MnS6 octahedra and corners with five GaS4 tetrahedra. The corner-sharing octahedra tilt angles range from 51–63°. There are a spread of Ga–S bond distances ranging from 2.26–2.38 Å. In the twelfth Ga3+ site, Ga3+ is bonded to four S2- atoms to form GaS4 tetrahedra that share corners with three MnS6 octahedra and corners with six GaS4 tetrahedra. The corner-sharing octahedra tilt angles range from 57–62°. There are a spread of Ga–S bond distances ranging from 2.22–2.36 Å. There are twenty-four inequivalent S2- sites. In the first S2- site, S2- is bonded in a trigonal non-coplanar geometry to three Ga3+ atoms. In the second S2- site, S2- is bonded in a trigonal non-coplanar geometry to three Ga3+ atoms. In the third S2- site, S2- is bonded in a distorted trigonal planar geometry to one Mn2+ and two Ga3+ atoms. In the fourth S2- site, S2- is bonded to three Mn2+ and one Ga3+ atom to form a mixture of distorted corner and edge-sharing SMn3Ga trigonal pyramids. In the fifth S2- site, S2- is bonded in a trigonal non-coplanar geometry to three Ga3+ atoms. In the sixth S2- site, S2- is bonded to three Mn2+ and one Ga3+ atom to form a mixture of distorted corner and edge-sharing SMn3Ga trigonal pyramids. In the seventh S2- site, S2- is bonded in a trigonal non-coplanar geometry to three Ga3+ atoms. In the eighth S2- site, S2- is bonded in a rectangular see-saw-like geometry to three Mn2+ and one Ga3+ atom. In the ninth S2- site, S2- is bonded in a trigonal non-coplanar geometry to three Ga3+ atoms. In the tenth S2- site, S2- is bonded in a trigonal non-coplanar geometry to three Ga3+ atoms. In the eleventh S2- site, S2- is bonded in a 4-coordinate geometry to two Mn2+ and two Ga3+ atoms. In the twelfth S2- site, S2- is bonded to three Mn2+ and one Ga3+ atom to form a mixture of distorted corner and edge-sharing SMn3Ga trigonal pyramids. In the thirteenth S2- site, S2- is bonded in a 4-coordinate geometry to two Mn2+ and two Ga3+ atoms. In the fourteenth S2- site, S2- is bonded in a trigonal non-coplanar geometry to three Ga3+ atoms. In the fifteenth S2- site, S2- is bonded to three Mn2+ and one Ga3+ atom to form a mixture of distorted corner and edge-sharing SMn3Ga trigonal pyramids. In the sixteenth S2- site, S2- is bonded in a distorted rectangular see-saw-like geometry to two Mn2+ and two Ga3+ atoms. In the seventeenth S2- site, S2- is bonded in a trigonal planar geometry to one Mn2+ and two Ga3+ atoms. In the eighteenth S2- site, S2- is bonded in a rectangular see-saw-like geometry to three Mn2+ and one Ga3+ atom. In the nineteenth S2- site, S2- is bonded in a distorted trigonal planar geometry to one Mn2+ and two Ga3+ atoms. In the twentieth S2- site, S2- is bonded in a distorted rectangular see-saw-like geometry to three Mn2+ and one Ga3+ atom. In the twenty-first S2- site, S2- is bonded in a rectangular see-saw-like geometry to three Mn2+ and one Ga3+ atom. In the twenty-second S2- site, S2- is bonded in a distorted rectangular see-saw-like geometry to two Mn2+ and two Ga3+ atoms. In the twenty-third S2- site, S2- is bonded in a trigonal non-coplanar geometry to three Ga3+ atoms. In the twenty-fourth S2- site, S2- is bonded in a distorted trigonal planar geometry to one Mn2+ and two Ga3+ atoms.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

2020-05-02. Materials Data on Mn(GaS2)2 by Materials Project. https://doi.org/10.17188/1281445

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related reports

Cyclic moisture reactivation of calcium sorbents for long duration thermochemical energy storage

The transition to a flexible and reliable energy infrastructure, using electro-thermal energy generation technologies such as geothermal, concentrated solar power, and nuclear, usually demands simultaneous advancement of thermal energy storage (TES) to support on-demand electricity generation and industrial applications while mitigating the inherent intermittency of renewable energy sources and power outages from direct energy generation. Among TES technologies, thermochemical energy storage (TCES) based on calcium looping emerges as a compelling high-power energy storage candidate due to its high reaction enthalpy, compatibility with elevated operating temperatures, and abundance of low-cost materials. However, the long-term durability of calcium-based sorbents for TCES is hindered by surface sintering and particle aggregation, leading to performance degradation over repeated thermal cycles. This study explores a moisture hydration-based strategy to regenerate a degraded calcium sorbent and mitigate performance degradation for long duration TCES. The addition of moisture transforms calcium oxide into calcium hydroxide and produces intercalation water layers, associated with a regenerated surface area and reduced calcium oxide crystallite size. Both these effects are beneficial in restoring the sorbents' reactivity for carbonization. Additionally, an optimized hydration-assisted reactivation protocol balances the recovered energy storage capacity with heating penalty required for moisture removal from hydrated samples, resulting in an enhanced energy storage capacity up to 176% compared to benchmark sorbents that undergo cycling without reactivation after 60 cycles. In conclusion, these results highlight the potential of hydration-assisted reactivation to enhance the long-term performance of TCES, providing an effective pathway to advancing electro-thermal storage technologies.

36 MATERIALS SCIENCE↗