DOE OSTI · 1281619
Materials Data on AlTlSiO4 by Materials Project
Abstract
TlAlSiO4 crystallizes in the monoclinic P2_1/c space group. The structure is three-dimensional. Tl1+ is bonded in a 1-coordinate geometry to one O2- atom. The Tl–O bond length is 2.29 Å. Al3+ is bonded in a distorted pentagonal planar geometry to five O2- atoms. There are a spread of Al–O bond distances ranging from 1.80–2.00 Å. Si4+ is bonded in a tetrahedral geometry to four O2- atoms. There are a spread of Si–O bond distances ranging from 1.56–1.74 Å. There are four inequivalent O2- sites. In the first O2- site, O2- is bonded in a distorted T-shaped geometry to two equivalent Al3+ and one Si4+ atom. In the second O2- site, O2- is bonded in a distorted linear geometry to one Al3+ and one Si4+ atom. In the third O2- site, O2- is bonded in a distorted linear geometry to one Tl1+ and one Si4+ atom. In the fourth O2- site, O2- is bonded in a distorted T-shaped geometry to two equivalent Al3+ and one Si4+ atom.
Explore related subjects
Keep this discovery
Explore connections, maps & timelines
2020-07-18. Materials Data on AlTlSiO4 by Materials Project. https://doi.org/10.17188/1281619
Cite the original work for its findings. Save a collection to share your selection of sources.