DOE OSTI · 1346183
Final Technical Report
Abstract
Our BES supported program integrates molecular beam epitaxy growth with in situ atomic scale imaging using scanning tunneling microscopy/spectroscopy and atomic force microscopy. Aided by density functional theory calculations, we explore enhanced functionalities emerging from the interplay of strain, proximity, and spin-orbit interactions in heterostructures of wide band gap semiconductors, graphene, and Dirac materials, focusing on three thrusts: 1) doping wide bandgap semiconductors and graphene; 2) graphene nanoribbons and graphene-semiconductor heterostructures; and 3) Dirac materials. Our findings and discoveries have led to the publication of one book chapter and twenty-three refereed journal articles, including several in high impact journals such as Nature Communications, Physical Review Letters, and Nano Letters. Highlights of each thrust are provided in the report.
Explore related subjects
Keep this discovery
Explore connections, maps & timelines
Li, Lian. 2017-03-08. Final Technical Report. https://doi.org/10.2172/1346183
Cite the original work for its findings. Save a collection to share your selection of sources.