DOE OSTI · 1475504
Engineering Spin-Orbit Interaction in Silicon
Abstract
There has been much interest in leveraging the topological order of materials for quantum information processing. Among the various solid-state systems, one-dimensional topological superconductors made out of strongly spin-orbit-coupled nanowires have been shown to be the most promising material platform. In this project, we investigated the feasibility of turning silicon, which is a non-topological semiconductor and has weak spin-orbit coupling, into a one-dimensional topological superconductor. Our theoretical analysis showed that it is indeed possible to create a sizable effective spin-orbit gap in the energy spectrum of a ballistic one-dimensional electron channel in silicon with the help of nano-magnet arrays. Experimentally, we developed magnetic materials needed for fabricating such nano-magnets, characterized the magnetic behavior at low temperatures, and successfully demonstrated the required magnetization configuration for opening the spin-orbit gap. Our results pave the way toward a practical topological quantum computing platform using silicon, one of the most technologically mature electronic materials.
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Lu, Tzu-Ming, Maurer, Leon, Bussmann, Ezra, Harris, Charles Thomas, Tracy, Lisa A., Sapkota, Keshab Raj. 2018-09-01. Engineering Spin-Orbit Interaction in Silicon. https://doi.org/10.2172/1475504
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