Focal Plane Array Low Background Testing (Focal Plane Array Characterization under a Low Background)

Abstract

Most infra-red (IR) imagers for tactical applications use a direct injection (DI) input amplifier design. Fewer transistors in the unit cell allow the read-out electronic circuit (ROIC) to be minimized. This allows either more room for charge integration capacitors or finer pixel pitches. These ROICs work well at high background irradiance levels. However, at low background irradiance levels photocurrent inject efficiency for a DI unit cell amplifier is reduced. Some models have shown that this efficiency can drastically affect performance under low background conditions. The main benefit for Sandia National Laboratories (SNL) and L-3 Communications Cincinnati Electronics (L-3) was a better understanding of these types of sensors under low background conditions. It also provided the opportunity for an independent analysis of these sensors. The purpose of this project was to measure DI for low light levels under different operating temperatures of the L-3 CE103 a 1280 x 1024 indium antimonide 15 micron pitch detector. Results showed DI efficiency approaches 75% under extremely low light levels. Additionally, measured data didn't conform well to traditional circuit based models indicated that other effects are contributing to DI efficiency. A "spot scanning" PSF measurement was also conducted to measure pixel-to-pixel crosstalk for this array. Spot scanning data showed near ideal performance.