Optical devices having controlled nonlinearity

Abstract

An optical device is provided having a solid state nonlinear material with a nanostructured extent, in at least one dimension, that is less than about 10 nm or that is at a temperature of less than about 77 K. An electronic band gap, EGap, of the material is at least about twice as large as an energy of a photon with a wavelength, λ, equal to an operational wavelength of the device. The material is characterized by a switching figure of merit, ξ, having a value that is at least about 2π. A dielectric structure is around at least one dimension of the nonlinear material in a geometric arrangement having a characteristic photonic band gap that at least partially overlaps the electronic band gap of the material. At least one waveguide is disposed at the dielectric structure in sufficient proximity with the material for coupling light to the material.