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DOE OSTI · 1601268

On quantum-dot lasing at gain peak with linewidth enhancement factor $α$ H = 0

Chow, Weng W.·Zhang, Zeyu·Norman, Justin C.·Liu, Songtao·Bowers, John E.
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Abstract

This paper describes an investigation of the linewidth enhancement factor α H in a semiconductor quantum-dot laser. Results are presented for active region parameters and laser configurations important for minimizing α H . In particular, the feasibility of lasing at the gain peak with α H = 0 is explored. The study uses a many-body theory with dephasing effects from carrier scattering treated at the level of quantum-kinetic equations. InAs quantum-dot lasers with different p-modulation doping densities are fabricated and measured to verify the calculated criteria on laser cavity design and epitaxial growth conditions.

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Chow, Weng W., Zhang, Zeyu, Norman, Justin C., Liu, Songtao, Bowers, John E.. 2020-02-03. On quantum-dot lasing at gain peak with linewidth enhancement factor $α$ H = 0. https://doi.org/10.1063/1.5133075

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