DOE OSTI · 1606028
Development of a grain growth model for U 3 Si 2 using experimental data, phase field simulation and molecular dynamics
Abstract
The purpose of this work is to develop a model for normal grain growth in U 3 Si 2 . The average grain boundary energy was determined from previously published molecular dynamics simulations. The grain growth kinetics were quantified at various temperatures by annealing nanocrystalline samples. Here, the mobility was determined by comparing phase field grain growth simulations to the experimental data.
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Cheniour, Amani, Tonks, Michael R., Gong, Bowen, Yao, Tiankai, He, Lingfeng, Harp, Jason M., Beeler, Benjamin, Zhang, Yongfeng, Lian, Jie. 2020-02-22. Development of a grain growth model for U 3 Si 2 using experimental data, phase field simulation and molecular dynamics. https://doi.org/10.1016/j.jnucmat.2020.152069
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