Nanoelectronics with proximitized materials

Abstract

While materials design for many device applications usually relies on adding impurities, recent advances in scaling-down heterostructures with improved interfacial properties offer a different way to transform a large class of materials. A given material can be drastically changed by inheriting properties leaking from its neighboring regions, such as magnetism, superconductivity, or spin-orbit coupling. While these proximity effects often have a short range and are considered negligible, the situation is qualitatively different in atomically thin and two-dimensional materials where the extent of proximity effects can exceed their thickness. Consequently, proximitized materials have a potential to display novel properties and device opportunities, absent in any of the constituent region of the considered heterostructures. Such proximitized materials could provide platforms for a wide range of emerging applications: from seamless integration of memory and logic, to fault-tolerant topologically protected quantum computing.