DOE OSTI · 1636109
High-efficiency GaN-based LED with patterned SiO2 current blocking layer deposited on patterned ITO
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Zhou, Shengjun, Liu, Mengling, Xu, Haohao, Liu, Yingce, Gao, Yilin, Ding, Xinghuo, Lan, Shuyu, Fan, Yuchen, Gui, Chengqun, Liu, Sheng. 2019-01-01. High-efficiency GaN-based LED with patterned SiO2 current blocking layer deposited on patterned ITO. https://doi.org/10.1016/j.optlastec.2018.08.049
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