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DOE OSTI · 1647700

Redox transistors based on TiO 2 for analogue neuromorphic computing

Abstract

The ability to train deep neural networks on large data sets have made significant impacts onto artificial intelligence, but consume significant amounts of energy due to the need to move information from memory to logic units. In-memory "neuromorphic" computing presents an alternative framework that processes information directly on memory elements. In-memory computing has been limited by the poor performance of the analogue information storage element, often phase-change memory or memristors. To solve this problem, we developed two types of "redox transistors" using TiO 2 (anatase) which stores analogue information states through the electrochemical concentration of dopants in the crystal. The first type of redox transistor uses lithium as the electrochemical dopant ion, and its key advantage is low operating voltage. The second uses oxygen vacancies as the dopant, which is CMOS compatible and can retain state even when scaled to nanosized dimensions. Both devices offer significant advantages in terms of predictable analogue switching over conventional filamentary-based devices, and provide a significant advance in developing materials and devices for neuromorphic computing.

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BibTeXRIS

Li, Yiyang, Fuller, Elliot James, Talin, Albert Alec. 2020-08-01. Redox transistors based on TiO 2 for analogue neuromorphic computing. https://doi.org/10.2172/1647700

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36 MATERIALS SCIENCE↗