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DOE OSTI · 1687045

Materials Data on InGaAs2 by Materials Project

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Abstract

InGaAs2 is Chalcopyrite-like structured and crystallizes in the tetragonal P-4m2 space group. The structure is three-dimensional. In3+ is bonded to four equivalent As3- atoms to form InAs4 tetrahedra that share corners with four equivalent InAs4 tetrahedra and corners with eight equivalent GaAs4 tetrahedra. All In–As bond lengths are 2.65 Å. Ga3+ is bonded to four equivalent As3- atoms to form GaAs4 tetrahedra that share corners with four equivalent GaAs4 tetrahedra and corners with eight equivalent InAs4 tetrahedra. All Ga–As bond lengths are 2.52 Å. As3- is bonded to two equivalent In3+ and two equivalent Ga3+ atoms to form corner-sharing AsIn2Ga2 tetrahedra.

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36 MATERIALS SCIENCEAs-Ga-Incrystal structureInGaAs2

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2019-01-13. Materials Data on InGaAs2 by Materials Project. https://doi.org/10.17188/1687045

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