Materials Data on Sc(VSi)5 by Materials Project

Abstract

Sc(VSi)5 crystallizes in the monoclinic C2/m space group. The structure is three-dimensional. Sc2+ is bonded to seven Si+2.40- atoms to form ScSi7 pentagonal bipyramids that share corners with two equivalent ScSi7 pentagonal bipyramids, corners with eight VSi7 pentagonal bipyramids, edges with three equivalent ScSi7 pentagonal bipyramids, and faces with six VSi7 pentagonal bipyramids. There are a spread of Sc–Si bond distances ranging from 2.64–2.79 Å. There are four inequivalent V2+ sites. In the first V2+ site, V2+ is bonded in a 8-coordinate geometry to two equivalent V2+ and six Si+2.40- atoms. There are one shorter (2.45 Å) and one longer (2.48 Å) V–V bond lengths. There are a spread of V–Si bond distances ranging from 2.45–2.62 Å. In the second V2+ site, V2+ is bonded to seven Si+2.40- atoms to form distorted VSi7 pentagonal bipyramids that share corners with three equivalent ScSi7 pentagonal bipyramids, corners with five VSi7 pentagonal bipyramids, edges with four VSi7 pentagonal bipyramids, faces with two equivalent ScSi7 pentagonal bipyramids, and faces with four VSi7 pentagonal bipyramids. There are a spread of V–Si bond distances ranging from 2.38–2.75 Å. In the third V2+ site, V2+ is bonded to seven Si+2.40- atoms to form distorted VSi7 pentagonal bipyramids that share a cornercorner with one ScSi7 pentagonal bipyramid, corners with seven VSi7 pentagonal bipyramids, edges with four VSi7 pentagonal bipyramids, faces with two equivalent ScSi7 pentagonal bipyramids, and faces with four VSi7 pentagonal bipyramids. There are a spread of V–Si bond distances ranging from 2.41–2.74 Å. In the fourth V2+ site, V2+ is bonded to seven Si+2.40- atoms to form VSi7 pentagonal bipyramids that share corners with four equivalent ScSi7 pentagonal bipyramids, corners with six VSi7 pentagonal bipyramids, edges with three equivalent VSi7 pentagonal bipyramids, faces with two equivalent ScSi7 pentagonal bipyramids, and faces with four VSi7 pentagonal bipyramids. There are a spread of V–Si bond distances ranging from 2.57–2.82 Å. There are five inequivalent Si+2.40- sites. In the first Si+2.40- site, Si+2.40- is bonded in a 10-coordinate geometry to seven V2+ and three Si+2.40- atoms. There are one shorter (2.49 Å) and two longer (2.79 Å) Si–Si bond lengths. In the second Si+2.40- site, Si+2.40- is bonded in a 9-coordinate geometry to three equivalent Sc2+ and six V2+ atoms. In the third Si+2.40- site, Si+2.40- is bonded in a 11-coordinate geometry to one Sc2+ and eight V2+ atoms. In the fourth Si+2.40- site, Si+2.40- is bonded in a 10-coordinate geometry to two equivalent Sc2+, six V2+, and two equivalent Si+2.40- atoms. There are one shorter (2.43 Å) and one longer (2.50 Å) Si–Si bond lengths. In the fifth Si+2.40- site, Si+2.40- is bonded in a 10-coordinate geometry to one Sc2+, six V2+, and three Si+2.40- atoms. The Si–Si bond length is 2.40 Å.