DOE OSTI · 1707191
Materials Data on Ga3Sn by Materials Project
Abstract
Ga3Sn is Uranium Silicide structured and crystallizes in the cubic Pm-3m space group. The structure is three-dimensional. Ga is bonded to eight equivalent Ga and four equivalent Sn atoms to form distorted GaGa8Sn4 cuboctahedra that share corners with twelve equivalent GaGa8Sn4 cuboctahedra, edges with eight equivalent SnGa12 cuboctahedra, edges with sixteen equivalent GaGa8Sn4 cuboctahedra, faces with four equivalent SnGa12 cuboctahedra, and faces with fourteen equivalent GaGa8Sn4 cuboctahedra. All Ga–Ga bond lengths are 3.12 Å. All Ga–Sn bond lengths are 3.12 Å. Sn is bonded to twelve equivalent Ga atoms to form SnGa12 cuboctahedra that share corners with twelve equivalent SnGa12 cuboctahedra, edges with twenty-four equivalent GaGa8Sn4 cuboctahedra, faces with six equivalent SnGa12 cuboctahedra, and faces with twelve equivalent GaGa8Sn4 cuboctahedra.
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2020-05-02. Materials Data on Ga3Sn by Materials Project. https://doi.org/10.17188/1707191
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