DOE OSTI · 1735021
Doped semiconductors and methods of making the same
Abstract
The present disclosure relates to a composition that includes a first element, a second element, a third element, a ligand, and an anion, where the first element and the second element form a nanocrystal that includes a surface and a crystal lattice, a first portion of the third element covers at least a second portion of the surface in the form of a layer, a third portion of the third element is incorporated into the crystal lattice, and the ligand and the anion are ionically bound to at least one of the second element and/or the first portion of the third element.
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Kroupa, Daniel McCray, Hughes, Barbara Katherine, Beard, Matthew C.. 2020-07-14. Doped semiconductors and methods of making the same. https://www.osti.gov/biblio/1735021
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