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DOE OSTI · 1735115

Metal chalcogenides for pseudocapacitive applications

Tolbert, Sarah H.·Dunn, Bruce S.·Cook, John·Kim, Hyung-seok·Lin, Terri Chai
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Abstract

A synthetic metal dichalcogenide having a highly defected nanocrystalline layered structure, wherein layer spacing is larger than in perfect crystals of the same material, wherein the defected structure provides access to interlayer crystals of the same material, and wherein the defected structure facilitates a pseudocapacitive charge storage mechanism. The metal dichalcogenide is receptive to intercalation of ions such as Li ions, Na ions, Mg ions, and Ca ions, and does not undergo a phase transition upon intercalation of Li ions, Na ions, Mg ions, or Ca ions. The metal dichalcogenide can be used, for example, as a component of an electrode that also includes a carbon derivative, and a binder, which are intermixed to form the electrode. The resultant composite electrode is highly porous and highly electronically conductive, and is suitable for use in devices such as symmetric capacitors, asymmetric capacitors, rocking chair batteries, and other devices.

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25 ENERGY STORAGE36 MATERIALS SCIENCE37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

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Tolbert, Sarah H., Dunn, Bruce S., Cook, John, Kim, Hyung-seok, Lin, Terri Chai. 2020-08-04. Metal chalcogenides for pseudocapacitive applications. https://www.osti.gov/biblio/1735115

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