Materials Data on GaAs by Materials Project

Abstract

GaAs crystallizes in the monoclinic Cm space group. The structure is three-dimensional. there are six inequivalent Ga3+ sites. In the first Ga3+ site, Ga3+ is bonded in a single-bond geometry to one As3- atom. The Ga–As bond length is 2.75 Å. In the second Ga3+ site, Ga3+ is bonded in a trigonal planar geometry to three As3- atoms. There are a spread of Ga–As bond distances ranging from 2.35–2.48 Å. In the third Ga3+ site, Ga3+ is bonded in a trigonal planar geometry to three As3- atoms. There are a spread of Ga–As bond distances ranging from 2.34–2.47 Å. In the fourth Ga3+ site, Ga3+ is bonded in a trigonal planar geometry to three As3- atoms. There are one shorter (2.43 Å) and two longer (2.47 Å) Ga–As bond lengths. In the fifth Ga3+ site, Ga3+ is bonded in a trigonal planar geometry to three As3- atoms. There are one shorter (2.43 Å) and two longer (2.48 Å) Ga–As bond lengths. In the sixth Ga3+ site, Ga3+ is bonded in a distorted trigonal pyramidal geometry to four As3- atoms. There are a spread of Ga–As bond distances ranging from 2.44–2.51 Å. There are six inequivalent As3- sites. In the first As3- site, As3- is bonded in a rectangular see-saw-like geometry to four Ga3+ atoms. In the second As3- site, As3- is bonded in a distorted trigonal non-coplanar geometry to three Ga3+ atoms. In the third As3- site, As3- is bonded in a distorted trigonal non-coplanar geometry to three Ga3+ atoms. In the fourth As3- site, As3- is bonded in a trigonal planar geometry to three Ga3+ atoms. In the fifth As3- site, As3- is bonded in a trigonal planar geometry to three Ga3+ atoms. In the sixth As3- site, As3- is bonded in a single-bond geometry to one Ga3+ atom.