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DOE OSTI · 1763530

Charon User Manual (V.2.1) (Rev.01)

Musson, Lawrence·Hennigan, Gary L.·Gao, Xujiao·Humphreys, Richard·Negoita, Mihai·Huang, Andy
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Abstract

This manual gives usage information for the Charon semiconductor device simulator. Charon was developed to meet the modeling needs of Sandia National Laboratories and to improve on the capabilities of the commercial TCAD simulators; in particular, the additional capabilities are running very large simulations on parallel computers and modeling displacement damage and other radiation effects in significant detail. The parallel capabilities are based around the MPI interface which allows the code to be ported to a large number of parallel systems, including linux clusters and proprietary "big iron" systems found at the national laboratories and in large industrial settings.

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73 NUCLEAR PHYSICS AND RADIATION PHYSICS97 MATHEMATICS AND COMPUTING

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Musson, Lawrence, Hennigan, Gary L., Gao, Xujiao, Humphreys, Richard, Negoita, Mihai, Huang, Andy. 2020-05-20. Charon User Manual (V.2.1) (Rev.01). https://doi.org/10.2172/1763530

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