DOE OSTI · 1802085
An interface-controlled Mott memristor in α -RuCl 3
Abstract
Memristor devices have history-dependent charge transport properties that are ideal for neuromorphic computing applications. We reveal a memristor material and mechanism in the layered Mott insulator α-RuCl 3 . The pinched hysteresis loops and S-shaped negative differential resistance in bulk crystals verify memristor behavior and are attributed to a nonlinear coupling between charge injection over a Schottky barrier at the electrical contacts and concurrent Joule heating. Direct simulations of this coupling can reproduce the device characteristics.
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Frick, Jordan R., Sridhar, Samanvitha, O'Donnell, Shaun, Maggard, Paul A., Dougherty, Daniel B.. 2020-05-04. An interface-controlled Mott memristor in α -RuCl 3. https://doi.org/10.1063/5.0009670
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