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DOE OSTI · 1817199

Quantum-Well Bound States in Graphene Heterostructure Interfaces

Abstract

We present experimental evidence of electronic and optical interlayer resonances in graphene van der Waals heterostructure interfaces. Using the spectroscopic mode of a low-energy electron microscope (LEEM), we characterized these interlayer resonant states up to 10 eV above the vacuum level. Compared with nontwisted, AB-stacked bilayer graphene (AB BLG), an ≈ 0.2 Å increase was found in the interlayer spacing of 30° twisted bilayer graphene (30°-tBLG). In addition, we used Raman spectroscopy to probe the inelastic light-matter interactions. A unique type of Fano resonance was found around the D and G modes of the graphene lattice vibrations. This anomalous, robust Fano resonance is a direct result of quantum confinement and the interplay between discrete phonon states and the excitonic continuum.

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BibTeXRIS

Dai, Zhongwei, Gao, Zhaoli, Pershoguba, Sergey S., Tiwale, Nikhil, Subramanian, Ashwanth, Zhang, Qicheng, Eads, Calley, Tenney, Samuel A., Osgood, Richard M., Nam, Chang-Yong, Zang, Jiadong, Johnson, A. T. Charlie, Sadowski, Jerzy T.. 2021-08-20. Quantum-Well Bound States in Graphene Heterostructure Interfaces. https://doi.org/10.1103/physrevlett.127.086805

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36 MATERIALS SCIENCE↗