DOE OSTI · 1823902
Semiconducting devices containing quantum wells
Abstract
The present disclosure relates to a device that includes, in order, an emitter layer, a quantum well, and a base layer, where the emitter layer has a first bandgap, the base layer has a second bandgap, and the first bandgap is different than the second bandgap by an absolute difference greater than or equal to 25 meV.
Keep this discovery
Explore connections, maps & timelines
Steiner, Myles Aaron, France, Ryan Matthew. 2021-04-27. Semiconducting devices containing quantum wells. https://www.osti.gov/biblio/1823902
Cite the original work for its findings. Save a collection to share your selection of sources.