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DOE OSTI · 1845576

Artificial spin ice phase-change memory resistors

Caravelli, Francesco (ORCID:0000000179643030)·Chern, Gia-Wei·Nisoli, Cristiano
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Abstract

Abstract We present a proposal for realization of an electrical memory reminiscent of a memristor in connected Kagome artificial spin ice. We show that current flowing through the system alters the magnetic ensemble, which in turns controls the overall resistance thus leaving memory of current passage in the system. This introduces a current-dependent effect for a dynamic resistive state. We simulate a spin-induced thermal phase-change mechanism, and an athermal domain-wall spin inversion. In both cases we observe electrical memory behavior with an I – V hysteretic pinched loop, typical of memristors. These results can be extended to the more complex geometries in which artificial spin ice can be designed to engineer the hysteresis curve.

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71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICSartificial spin icemagnetoresistancememorymemristorsphase change materials

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Caravelli, Francesco (ORCID:0000000179643030), Chern, Gia-Wei, Nisoli, Cristiano. 2022-02-16. Artificial spin ice phase-change memory resistors. https://doi.org/10.1088/1367-2630%2Fac4c0a

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