Digging deeper: Buried layers and interfaces studied by modified total electron yield and soft x-ray absorption spectroscopy

Abstract

We report on the soft x-ray absorption spectroscopy investigation of thin film capacitors using a modified total electron yield detection mode. This mode utilizes two ammeters instead of one as commonly employed in the classical total electron yield scheme to measure photocurrents of devices under soft x-ray irradiation. The advantage of this configuration over the surface sensitive classical total electron yield mode is that it can provide information from buried layers and interfaces up to a thickness equal to the penetration depth of soft x-rays. The method can be easily adapted to existing synchrotron end stations. We investigate dielectric capacitors with dissimilar electrodes to assess the feasibility of the modified total electron yield method. Furthermore, in operando soft x-ray absorption spectroscopy measurements are performed on ferroelectric capacitors under bias and using two ammeters. The experimental results are discussed in terms of the external and internal photoemission processes and their distribution in thin film capacitors under an external bias condition. The proposed detection method opens the way to perform electronic and chemical state analyses of the buried interfaces and layers in various devices like multiferroic tunnel junctions, memristive devices, etc., during operation under an applied bias.