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DOE OSTI · 1890078

Gallium Nitride Superjunction Transistor (Continued Funding Report)

Allen, N. P.
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Abstract

The initial goal of this project is to develop the gallium vacancy assisted diffusion (GAID) method in GaN and apply it to demonstrate 2-terminal, 3-terminal, and large area Superjunction-enhanced modules. These devices will find use in high efficiency power conversion applications with the capability of operating at higher voltages, higher frequency, and less loss than comparable stat-ofthe-art devices. The approach of this project has been to utilize simulation tools to drive diffusion experiments and inform semiconductor device fabrication processes. VASP has been relied upon to simulate first principles diffusion mechanisms while SILVACO TCAD has been utilized to understand tradeoffs of the the critical dimensions in GaN devices.

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42 ENGINEERINGPhysics - Solid state physics, Energy - Conversion, Engineering - Electronic and electrical engineering, Materials science

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BibTeXRIS

Allen, N. P.. 2022-09-30. Gallium Nitride Superjunction Transistor (Continued Funding Report). https://doi.org/10.2172/1890078

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