DOE OSTI · 1892544
Gallium nitride electromagnetic pulse arrestor
Abstract
A GaN diode EMP arrestor exhibits breakdown in <10 ns at reverse-bias voltage >20 kV. Additionally, the arrestor exhibits avalanche ruggedness at 1 kA/cm 2 in a 1 mm 2 device (i.e. 10 A absolute current) over a period of 500 ns following the onset of breakdown. Finally, the specific on-resistance in the forward direction is <20 mΩ cm 2 .
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Kaplar, Robert, Flicker, Jack David, Lavrova, Olga. 2022-01-18. Gallium nitride electromagnetic pulse arrestor. https://www.osti.gov/biblio/1892544
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