DOE OSTI · 1892827
Methods of exfoliating single crystal materials
Abstract
Disclosed herein are methods for exfoliation of single crystals allowing for growth of high crystalline quality on the exfoliated surfaces for III-V photovoltaics. Also disclosed herein are methods for growing GaAs (111) on layered-2D Bi 2 Se 3 (0001) substrates in an MOCVD reactor.
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Norman, Andrew Gordon, Melamed, Celeste Louise, Toberer, Eric Steven, McMahon, William Edwin. 2022-04-12. Methods of exfoliating single crystal materials. https://www.osti.gov/biblio/1892827
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