DOE OSTI · 1893039
Doped passivated contacts
Abstract
PolySi:Ga/SiO2 passivated contacts were prepared using ion implantation and dopant inks to introduce Ga into a-Si. Following crystallization anneals these p-type contacts exhibited improved passivation (iVoc of about 730 mV) over B-doped passivated contacts for solar cells.
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Young, David Levi, Stradins, Pauls, Lee, Benjamin Guocian. 2022-06-14. Doped passivated contacts. https://www.osti.gov/biblio/1893039
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