DOE OSTI · 1925109
Conductive strip based mask for metallization of semiconductor devices
Abstract
Methods of manufacturing a semiconductor device, and resulting semiconductor device are described. In an example, the method for manufacturing a semiconductor device include forming a semiconductor region and forming a metal seed region over the semiconductor region. The method can include placing a conductive strip over a first portion of the metal region, where the conductive strip is formed over the semiconductor region. The method can include bonding a contacting portion of the conductive strip to the first portion the metal region. The method can include etching a second portion of the metal region and where the conductive strip inhibits etching of the first portion of the metal region. In an example, the conductive strip can have a coating. In one example, the semiconductor device can be a solar cell.
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Harder, Nils-Peter. 2022-09-13. Conductive strip based mask for metallization of semiconductor devices. https://www.osti.gov/biblio/1925109
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