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DOE OSTI · 1969355

Mid-Infrared Nonlinear Frequency Conversion Using Monolithic Barium Titanate on Silicon-on-Insulator

Zhou, Junchao·Liu, Mingzhao·Zhou, Chenyu·Kuo, Bing Hau·Shieu, Fuh-Sheng·Lin, Pao Tai
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Abstract

In this work, efficient nonlinear frequency conversion in the mid-infrared (mid-IR) region was demonstrated by a barium titanate (BTO) on a silicon-on-insulator (SOI) substrate. The BTO thin film was epitaxially grown by pulsed-laser deposition (PLD). The tensorial second order optical nonlinearity and the ferroelectric domain property of the BTO were characterized by the polarimetric mid-IR second harmonic generation (SHG) measurements. Azimuthal-dependent polarized SHG was modeled at different combinations of the nonlinear coefficient $d_{ij}$ and the domain fraction factor $ΔD^Y/ΔD^X$. Strong SHG intensity was experimentally observed over a broad spectrum at λ = 3.1 μm - 3.7 μm. A characteristic linear dependence between the SHG signal and the square of the pumping laser intensity was observed. The monolithic integration between the epitaxial BTO and the Si provides a compact platform for efficient on-chip light generation and quantum photonic technologies.

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25 ENERGY STORAGEbarium titanatemid-infraredsecond harmonic generationthin films

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Zhou, Junchao, Liu, Mingzhao, Zhou, Chenyu, Kuo, Bing Hau, Shieu, Fuh-Sheng, Lin, Pao Tai. 2022-05-24. Mid-Infrared Nonlinear Frequency Conversion Using Monolithic Barium Titanate on Silicon-on-Insulator. https://doi.org/10.1109/jstqe.2022.3177591

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