DOE OSTI · 1984157
Correlation versus hybridization gap in CaMn$$_{2}$$Bi$$_{2}$$
Abstract
Abstract We study the interplay between electronic correlations and hybridization in the low-energy electronic structure of CaMn $$_2$$ 2 Bi $$_2$$ 2 , a candidate hybridization-gap semiconductor. By employing a DFT+ U approach we find both the antiferromagnetic Néel order and band gap in good agreement with the corresponding experimental values. Under hydrostatic pressure, we find a crossover from hybridization gap to charge-transfer insulting physics due to the delicate balance of hybridization and correlations. Increasing the pressure above $$P_c=4$$ P c = 4 GPa we find a simultaneous pressure-induced volume collapse, plane-to-chain, insulator to metal transition. Finally, we have also analyzed the topology in the antiferromagnetic CaMn $$_2$$ 2 Bi $$_2$$ 2 for all pressures studied.
Explore related subjects
Keep this discovery
Explore connections, maps & timelines
Lane, Christopher, Piva, M. M., Rosa, P. F. S., Zhu, Jian-Xin. 2023-06-07. Correlation versus hybridization gap in CaMn$$_{2}$$Bi$$_{2}$$. https://doi.org/10.1038/s41598-023-35812-2
Cite the original work for its findings. Save a collection to share your selection of sources.