DOE OSTI · 1986869
Low defect nuclear transmutation doping in nitride-based semiconductor materials
Abstract
Doped nitride-based semiconductor materials and methods of producing these materials are described herein.
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Kwon, Jae Wan, Gahl, John, Brockman, John. 2022-11-29. Low defect nuclear transmutation doping in nitride-based semiconductor materials. https://www.osti.gov/biblio/1986869
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