DOE OSTI · 1987231
Semiconductor suitable for use in photoanode
Abstract
A composition of matter includes an n-type semiconductor. At least a portion of the semiconductor has the crystal structure of the chemical compound represented by FeWO 4 . The portion of the semiconductor having the crystal structure of FeWO 4 includes iron and tungsten. A photoanode can have a light-absorbing layer that includes or consists of the semiconductor. A solar fuels generator can include the photoanode.
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Gregoire, John M., Suram, Santosh, Zhou, Lan, Shinde, Aniketa A.. 2023-03-14. Semiconductor suitable for use in photoanode. https://www.osti.gov/biblio/1987231
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