DOE OSTI · 1996710
Deterministic Localization of Strain-Induced Single-Photon Emitters in Multilayer GaSe
Abstract
The nanoscale strain has emerged as a powerful tool for controlling single-photon emitters (SPEs) in atomically thin transition metal dichalcogenides (TMDCs). However, quantum emitters in monolayer TMDCs are typically unstable in ambient conditions. Multilayer TMDCs could be a solution, but they suffer from low quantum efficiency, resulting in low brightness of the SPEs. Here, we report the deterministic spatial localization of strain-induced SPEs in multilayer GaSe by nanopillar arrays. The strain-controlled quantum confinement effect introduces well-isolated sub-bandgap photoluminescence and corresponding suppression of the broad band edge photoluminescence. Clear photon-antibunching behavior is observed from the quantum dot-like GaSe sub-bandgap exciton emission at 3.5 K. The strain-dependent confinement potential and the brightness are found to be strongly correlated, suggesting a promising route for tuning and controlling SPEs. The comprehensive investigations of strain-engineered GaSe SPEs provide a solid foundation for the development of 2D devices for quantum photonic technologies.
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Luo, Weijun, Puretzky, Alexander A., Lawrie, Benjamin J., Tan, Qishuo, Gao, Hongze, Chen, Zhuofa, Sergienko, Alexander V., Swan, Anna K., Liang, Liangbo, Ling, Xi. 2023-07-27. Deterministic Localization of Strain-Induced Single-Photon Emitters in Multilayer GaSe. https://doi.org/10.1021/acsphotonics.3c00052
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