DOE OSTI · 2006294
High Voltage Regrown GaN P-N Diodes Enabled by Defect and Doping.
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Armstrong, Andrew, Feezell, Daniel, Allerman, Andrew, Pickrell, Gregory, Aragon, Andrew, Crawford, Mary, Celio, Kimberlee, Leonard, Francois Leonard, Talin, Albert. 2022-12-01. High Voltage Regrown GaN P-N Diodes Enabled by Defect and Doping.. https://www.osti.gov/biblio/2006294
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