Interdiffusion in W/Si Multilayers with Boron Carbide Interlayers

Abstract

W/Si multilayers with B{sub 4}C as a diffusion barrier were deposited using ion beam sputtering technique. It was found that incorporation of B{sub 4}C at both interfaces of Si enhances the reflectivity of the multilayer. Though the interface of W/Si or W/B{sub 4}C has been studied in literature, what happens at Si/B{sub 4}C interfaces is largely unknown. This is primarily due to absence of contrast between Si/B{sub 4}C for x-rays. For neutrons there is significant contrast between Si and B{sub 4}C, therefore we used neutron reflectivity to study thermal stability of Si/B{sub 4}C multilayers. It was found that up to an annealing temperature of 573 K, the multilayer remains intact however at higher temperature interdiffusion starts.