DOE OSTI · 22596884
Dislocation core structures in (0001) InGaN
Abstract
Threading dislocation core structures in c-plane GaN and In{sub x}Ga{sub 1−x}N (0.057 ≤ x ≤ 0.20) films were investigated by aberration-corrected scanning transmission electron microscopy. a-type dislocations are unaffected by alloying with indium and have a 5/7-atom ring core structure in both GaN and In{sub x}Ga{sub 1−x}N. In contrast, the dissociation lengths of (a + c)-type dislocations are reduced, and new 7/4/9-atom ring and 7/4/8/5-atom ring core structures were observed for the dissociated (a + c)-type dislocations in In{sub x}Ga{sub 1−x}N, which is associated with the segregation of indium near (a + c)-type and c-type dislocation cores in In{sub x}Ga{sub 1−x}N, consistent with predictions from atomistic Monte Carlo simulations.
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Rhode, S. L., Sahonta, S. -L., Kappers, M. J., McAleese, C., Humphreys, C. J., Horton, M. K., Haigh, S. J., Pennycook, T. J., Dusane, R. O., Moram, M. A.. 2016-03-14. Dislocation core structures in (0001) InGaN. https://doi.org/10.1063/1.4942847
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