DOE OSTI · 2279191
An Inverse-Designed Nanophotonic Interface for Excitons in Atomically Thin Materials
Abstract
Efficient nanophotonic devices are essential for applications in quantum networking, optical information processing, sensing, and nonlinear optics. Extensive research efforts have focused on integrating two-dimensional (2D) materials into photonic structures, but this integration is often limited by size and material quality. Here, we use hexagonal boron nitride (hBN), a benchmark choice for encapsulating atomically thin materials, as a waveguiding layer while simultaneously improving the optical quality of the embedded films. When combined with a photonic inverse design, it becomes a complete nanophotonic platform to interface with optically active 2D materials. Grating couplers and low-loss waveguides provide optical interfacing and routing, tunable cavities provide a large exciton-photon coupling to transition metal dichalcogenide (TMD) monolayers through Purcell enhancement, and metasurfaces enable the efficient detection of TMD dark excitons. This work paves the way for advanced 2D-material nanophotonic structures for classical and quantum nonlinear optics.
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Gelly, Ryan J., White, Alexander D., Scuri, Giovanni, Liao, Xing, Ahn, Geun Ho, Deng, Bingchen, Watanabe, Kenji, Taniguchi, Takashi, Vučković, Jelena, Park, Hongkun. 2023-09-11. An Inverse-Designed Nanophotonic Interface for Excitons in Atomically Thin Materials. https://doi.org/10.1021/acs.nanolett.3c02931
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