DOE OSTI · 2293795
Dislocation glide suppression for misfit dislocation free heteroepitaxy
Abstract
An epitaxial structure includes a semiconductor substrate, a dislocation blocking layer; and one or more active layers.
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Bowers, John, Norman, Justin, Mukherjee, Kunal, Selvidge, Jennifer, Hughes, Eamonn. 2023-10-31. Dislocation glide suppression for misfit dislocation free heteroepitaxy. https://www.osti.gov/biblio/2293795
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