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DOE OSTI · 23141973

Optically pumped semiconductor laser based on a type-II CdS/ZnSe heterostructure

Butaev, M. R.·Kozlovsky, V. I.
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Abstract

An optically pumped semiconductor laser based on a type-II CdS/ZnSe nanoheterostructure containing 10 quantum wells (QWs) was studied. The structure was grown by metal-organic vapour phase epitaxy on a GaAs substrate. The lifetime of electron-hole pairs at a low pump level was measured by luminescence decay to be ∼0 ns. The peak power of the microcavity semiconductor laser at room temperature and longitudinal pumping by a repetitively pulsed N{sub 2} laser was 7.2 W at a wavelength of 514 nm. The relatively low laser slope efficiency (0.35 %) is explained by amplified spontaneous emission propagating along the structure. The peak power and efficiency of the laser in the case of transverse pumping increase to 70 W and 3.5 %, respectively. (lasers)

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71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS74 ATOMIC AND MOLECULAR PHYSICS75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITYCADMIUM SULFIDESDECAYEFFICIENCYELECTRONSGALLIUM ARSENIDESLASERSLIFETIMELUMINESCENCEORGANOMETALLIC COMPOUNDSPULSESPUMPINGPUMPSQUANTUM WELLSSEMICONDUCTOR MATERIALSSUBSTRATESTEMPERATURE RANGE 0273-0400 KVAPOR PHASE EPITAXYWAVELENGTHSZINC SELENIDES

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Butaev, M. R., Kozlovsky, V. I.. 2020-07-01. Optically pumped semiconductor laser based on a type-II CdS/ZnSe heterostructure. https://doi.org/10.1070/qel17245

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