Active Region Extent Assessment with X-rays (AREA-X)

Abstract

The development of semiconductor sensors for new particle tracking detectors places increasing limits on sensor characteristics such as uniformity, size and shape of inefficient areas and size of active compared to inactive sensor areas. Accurately assessing these relatively subtle effects requires either measurements in particle beams or the modification of samples to be used in dedicated laser test setups. Active Region Extent Assessment with X-rays (AREA-X) has been developed as an alternative method for the fast, efficient and precise study of the active area of a semiconductor sensor. It uses a monochromatic, micro-focused X-ray beam with a 10–20 keV energy range as provided by several synchrotron beam lines and uses the photo current induced in the sensor to measure the depth of the responsive sensor volume. It can be used to study local inhomogeneities or inefficiencies, the overall extent of the active sensor volume and its shape and its localised application, which makes the need to gather statistics over a large area unnecessary, allowing for fast readout, which enables studies of the sensor behaviour at a range of external parameters, e.g. temperature or applied bias voltage. This paper presents the measurement concept and technical setup of the measurement, results from initial measurements as well as capabilities and limitations of the method.