DOE OSTI · 2463098
Atomically Precise Ultra-High Performance 2D MicroElectronics
Abstract
Zyvex Labs has created several p-n junction devices with a variety of gaps between the boron and phosphorus electrodes, from 0-7.7 nm, which are now being measured. We have developed a different contacting process based on palladium disilicide rather than aluminium to improve the reliability of the device contacts. Preliminary measurements indicate that these new contacts are successfully contacting the buried dopant layers, which are intact after the overgrowth process. Modelling of the p-n junction properties has made good progress, with the model matching previous published data, and modelling of n-p-n junction devices has begun. This now awaits experimental validation.
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Mendez Granado, Juan Pedro, Gao, Xujiao, Misra, Shashank, Owen, James, Randall, John, Kirk, Wiley. 2022-12-01. Atomically Precise Ultra-High Performance 2D MicroElectronics. https://doi.org/10.2172/2463098
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