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DOE OSTI · 2470601

Large-scale efficient mid-wave infrared optoelectronics based on black phosphorus ink

Gupta, Niharika·Wang, Shu·Higashitarumizu, Naoki·Wang, Vivian·Lee, Kyuho·Park, Cheolmin·Javey, Ali
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Abstract

The mid-wave infrared (MWIR), ranging from 2 to 5 micrometers, is of substantial interest for chemical sensing, imaging, and spectroscopy. Black phosphorus (bP)–based MWIR light emitters and detectors have been shown to outperform the state-of-the-art for commercial devices due to the low Auger recombination coefficient of bP. However, the scalability of these devices remains a challenge. Here, we report a bP ink formula that preserves the exceptional MWIR optoelectronic properties of bP to deposit centimeter-scale, uniform, and pinhole free films with a photoluminescence quantum yield higher than competing III-V and II-VI semiconductors with similar bandgaps at high excitation regime. As a proof of concept, we use bP ink as a “phosphor” on a red commercial light-emitting diode to demonstrate bright MWIR light emission. We also show that these films can be integrated into heterostructure device architectures with electron and hole selective contacts for direct-injected light emission and detection in MWIR.

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Gupta, Niharika, Wang, Shu, Higashitarumizu, Naoki, Wang, Vivian, Lee, Kyuho, Park, Cheolmin, Javey, Ali. 2023-12-08. Large-scale efficient mid-wave infrared optoelectronics based on black phosphorus ink. https://doi.org/10.1126/sciadv.adi9384

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