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DOE OSTI · 2471208

Resolving electron and hole transport properties in semiconductor materials by constant light-induced magneto transport

Musiienko, Artem·Yang, Fengjiu·Gries, Thomas William·Frasca, Chiara·Friedrich, Dennis·Al-Ashouri, Amran·Sağlamkaya, Elifnaz·Lang, Felix·Kojda, Danny·Huang, Yi-Teng·Stacchini, Valerio·Hoye, Robert L. Z.·Ahmadi, Mahshid·Kanak, Andrii·Abate, Antonio
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Abstract

The knowledge of minority and majority charge carrier properties enables controlling the performance of solar cells, transistors, detectors, sensors, and LEDs. Here, we developed the constant light induced magneto transport method which resolves electron and hole mobility, lifetime, diffusion coefficient and length, and quasi-Fermi level splitting. We demonstrate the implication of the constant light induced magneto transport for silicon and metal halide perovskite films. We resolve the transport properties of electrons and holes predicting the material’s effectiveness for solar cell application without making the full device. The accessibility of fourteen material parameters paves the way for in-depth exploration of causal mechanisms limiting the efficiency and functionality of material structures. To demonstrate broad applicability, we further characterized twelve materials with drift mobilities spanning from 10 –3 to 10 3 cm 2 V –1 s –1 and lifetimes varying between 10 –9 and 10 –3 seconds. The universality of our method its potential to advance optoelectronic devices in various technological fields.

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Musiienko, Artem, Yang, Fengjiu, Gries, Thomas William, Frasca, Chiara, Friedrich, Dennis, Al-Ashouri, Amran, Sağlamkaya, Elifnaz, Lang, Felix, Kojda, Danny, Huang, Yi-Teng, Stacchini, Valerio, Hoye, Robert L. Z., Ahmadi, Mahshid, Kanak, Andrii, Abate, Antonio. 2024-01-05. Resolving electron and hole transport properties in semiconductor materials by constant light-induced magneto transport. https://doi.org/10.1038/s41467-023-44418-1

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